Continuous-wave Raman laser pumped within a semiconductor disk laser cavity.

نویسندگان

  • Daniele C Parrotta
  • Walter Lubeigt
  • Alan J Kemp
  • David Burns
  • Martin D Dawson
  • Jennifer E Hastie
چکیده

A KGd(WO₄)₂ Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5.6 W of absorbed diode pump power, and output power up to 0.8 W at 1143 nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157 nm.

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عنوان ژورنال:
  • Optics letters

دوره 36 7  شماره 

صفحات  -

تاریخ انتشار 2011